1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS

被引：0
|
作者：
Kanaya, Haruichi [1 ]
Tasaki, Kohei [1 ]
Takigawa, Ryo [1 ]
机构：
[1] Kyushu Univ, Dept Elect, Fukuoka, Japan
来源：
2020 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2020年
关键词：
terahertz; slot antenna; directional antenna; floating metal; 45 nm SOI CMOS;
D O I：
10.1109/rfit49453.2020.9226205
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a design of an one-sided directional slot antenna for 1THz frequency rage future telecommunication applications. The antenna was realized on the 45 nm SOI CMOS technology. The antenna was composed of the top antenna layer, thin dielectric inter layer and bottom floating metal layer. To enhance the bandwidth, 1x2 array antenna was designed which has 6.2 dBi antenna gain and 250GHz 3dB bandwidth at 1 THz in simulation.
引用
收藏
页码：166 / 168
页数：3
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