Interface analysis of Si-Al-O-N materials by a 300kV FE-TEM

被引：0
|
作者：
Xu, FF [1 ]
Wang, CM [1 ]
Bando, Y [1 ]
Mitomo, M [1 ]
机构：
[1] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan
来源：
MICROBEAM ANALYSIS 2000, PROCEEDINGS | 2000年 / 165期
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：163 / 164
页数：2
相关论文
共 50 条
  • [1] High spatial resolution elemental analysis with a 300kV FE-TEM
    Bando, Y
    ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 571 - 572
  • [2] MIXED ALPHA-(SI-AL-O-N) AND BETA-(SI-AL-O-N) MATERIALS WITH YTTRIA AND NEODYMIA ADDITIONS
    EKSTROM, T
    KALL, PO
    NYGREN, M
    OLSSON, PO
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1988, 105 : 161 - 168
  • [3] HIGH-RESOLUTION TEM STUDIES OF SI-AL-O-N CERAMICS
    RUHLE, M
    KIRN, M
    GAUCKLER, LJ
    AMERICAN CERAMIC SOCIETY BULLETIN, 1979, 58 (03): : 344 - 344
  • [4] A kinetic model for oxidation of Si-Al-O-N materials
    Chou, KC
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2006, 89 (05) : 1568 - 1576
  • [5] Mixed α- and β-(Si-Al-O-N) materials with yttria and neodymia additions
    Ekstrom, T.
    Kall, P.-O.
    Nygren, M.
    Olsson, P.-O.
    Materials Science and Engineering A, 1988, A105-6 (pt1) : 161 - 168
  • [6] PVD COATINGS IN THE SYSTEM SI-AL-O-N
    KNOTEK, O
    LOFFLER, F
    BEELE, W
    SILICON NITRIDE 93, 1994, 89-9 : 275 - 280
  • [7] POLYTYPES IN THE SI-AL-O-N AND RELATED SYSTEMS
    THOMPSON, DP
    ACTA CRYSTALLOGRAPHICA SECTION A, 1978, 34 : S379 - S379
  • [8] Structural characterization of Si-Al-O-N glasses
    McMillan, PF
    Sato, RK
    Poe, BT
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 224 (03) : 267 - 276
  • [9] COMPOUNDS AND PROPERTIES OF SYSTEM SI-AL-O-N
    LAND, PL
    WIMMER, JM
    BURNS, RW
    CHOUDHURY, NS
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1978, 61 (1-2) : 56 - 60
  • [10] Compositional characterization of an O-N-O layer in a DRAM using FE-TEM and EF-TEM
    Kawasaki, M
    Oikawa, T
    Ibe, K
    Park, KH
    Shiojiri, M
    Kersker, M
    ELECTRON MICROSCOPY 1998, VOL 1: GENERAL INTEREST AND INSTRUMENTATION, 1998, : 237 - 238
12345