Dielectric properties of L-asparagine doped TGS (Asp-TGS) crystals

被引：3
|
作者：
Arunmozhi, G [1 ]
Gomes, ED [1 ]
Ribeiro, JL [1 ]
机构：
[1] Univ Minho, Dept Fis, P-4710 Braga, Portugal
来源：
FERROELECTRICS | 2003年 / 295卷
关键词：
triglycine sulphate; L-asparagine doped TGS; activation energy; dielectric permittivity;
D O I：
10.1080/00150190390239378
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low frequency dielectric properties of TGS doped with a new dopant L-asparagine and its influence on the dynamics of the TGS system is reported. L-asparagine doped TGS (Asp-TGS) crystals exhibit lower dielectric permittivity compared to pure TGS. The ratio of the Curie constant indicates partial pinning of the domains by the dopants. The tg delta maxima observed in the studied temperature range are explained in terms of the hindered rotations of the glycine groups in the crystal structure.
引用
收藏
页码：681 / 689
页数：9
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