N7 FinFET Self-Aligned Quadruple Patterning Modeling

被引：0

作者：

Baudot, Sylvain ^{[1
]}

Guissi, Sofiane ^{[2
]}

Milenin, Alexey P. ^{[1
]}

Ervin, Joseph ^{[2
]}

Schram, Tom ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] COVENTOR, 3 Ave Quebec, F-91140 Villebon Sur Yvette, France

来源：

2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018) | 2018年

关键词：

FinFET; Pitch Walk; Modeling; Process Simulation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the tin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning process steps is assessed. Etch sensitivity to pattern density is reproduced in the model and provides insight on the effect of fin height variability.

引用

页码：344 / 347

页数：4

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