Fabrication of L10-FePt thin films by rapid thermal annealing

被引：8
|
作者：
Aimuta, K [1 ]
Nishimura, K
Hashi, S
Inoue, M
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
[2] Gifu Univ, Dept Mat Sci & Technol, Gifu 5011193, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 10期
关键词：
average grain diameter; film surface morphology; L1(0)-FePt alloy; rapid thermal annealing;
D O I：
10.1109/TMAG.2005.854941
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication of L1(0)-FePt thin films by using conventional thermal annealing and indirect rapid thermal annealing is studied. By using conventional thermal annealing, L1(0)-FePt thin films are fabricated over 500 degrees C. By using the rapid thermal annealing, it was found that the formation temperature of L1(0)-FePt thin films decreases effectively. In addition, this method enables to prevent the grain growth due to annealing.
引用
收藏
页码：3898 / 3900
页数：3
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