Tunneling effects in short period strained AlN/GaN superlattices

被引：4

作者：

Valcheva, E. ^{[1
]}

Kirilov, K. ^{[1
]}

Monemar, B. ^{[2
]}

Amano, H. ^{[3
]}

Akasaki, I. ^{[3
]}

机构：

[1] Univ Sofia, Fac Phys, 5 J Bourchier Blvd, Sofia 1164, Bulgaria

[2] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[3] Meijo Univ, Dept Elect & Elect Engn, Nagoya, Aichi 468, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

MOLECULAR-BEAM EPITAXY; TRANSPORT; GAN;

D O I：

10.1002/pssc.200880880

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We study electronic conduction of short period strained GaN/AlN superlattices. The mechanisms of current transport perpendicular to the layers were studied, with an emphasis on the elastic and inelastic tunneling through the AlN barriers. Electron transport as a function of temperature is examined in I-V, G-V (first derivative dI/dV). The current and the conductance show nonlinear oscillatory character. The observed characteristics are interpreted as sequential resonant tunneling through AlN barriers and reveal negative differential conductivity (NDC). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S751 / S754

页数：4

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