Enhancement of Spontaneous Emission Rate in an InGaN Quantum Dot Coupled to a Plasmonic Cavity

被引：0
|
作者：
Demory, Brandon [1 ]
Hill, Tyler [2 ]
Teng, Chu-Hsiang [1 ]
Zhang, Lei [2 ]
Deng, Hui [2 ]
Ku, P. C. [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2013年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An enhanced spontaneous emission rate was experimentally observed from a single semiconductor quantum dot, exhibiting photon antibunching, coupled to a silver plasmonic cavity.
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页数：2
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