Mechanisms of current formation in resonant tunneling AlN/GaN heterostructures

被引：20
|
作者：
Petrychuk, M. V. [1 ]
Belyaev, A. E.
Kurakin, A. M.
Danylyuk, S. V.
Klein, N.
Vitusevich, S. A.
机构：
[1] Taras Shevchenko Natl Univ, UA-01033 Kiev, Ukraine
[2] NASU, Inst Semicond Phys, UA-03028 Kiev, Ukraine
[3] Res Ctr Julich, CNI Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany
[4] Res Ctr Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 22期
关键词：
D O I：
10.1063/1.2817752
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper presents an analysis of transport and noise properties of double-barrier resonant tunneling diodes formed on the basis of AlN/GaN heterostructures. Two stable states are registered in the I-V characteristics of the diodes. The temperature dependences of current and noise behavior are analyzed to understand the contribution of different mechanisms responsible for current formation in the structures. The evolution of the spectral density of the noise current with temperature reveals several recombination-generation components. The mechanisms responsible for the formation of current in AlN/GaN/AlN diodes are discussed taking into account the Poole-Frenkel effect. (C) 2007 American Institute of Physics.
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页数：3
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