Monte Carlo simulation of Schottky diodes operating under terahertz cyclostationary conditions

被引：18

作者：

Shiktorov, P ^{[1
]}

Gruzinskis, SV

Pérez, S

González, T

Varani, L

Vaissière, JC

机构：

[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[2] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

[3] Univ Lecce, INFM, Natl Nanotechnol Lab, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy

[4] Univ Montpellier 2, Ctr Electron & Microoptoelectron Montpellier, CNRS, UMR 5507, F-34095 Montpellier 5, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 01期

关键词：

cyclostationary operation; frequency multiplication; Monte Carlo (MC) simulation; Schottky barrier diodes; signal-to-noise ratio; teragertz generation;

D O I：

10.1109/LED.2003.821635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report Monte Carlo simulations of the current response and noise spectrum in heavily doped nanometric GaAs Schottky-barrier diodes (SBDs) operating under periodic large-signal conditions in the forward bias region. Due to the rather thin depletion region and heavy doping of these diodes, we find that the returning carrier resonance is shifted well above the terahertz region, so that the low-frequency noise plateau extends over the terahertz region. Here, frequency multiplication and mixing can take place at noise levels equal or below than that of full shot noise. We show that the signal-to-noise ratio of these SBDs is definitely superior to that of bulk semiconductors exploiting velocity-field nonlinearity.

引用

页码：1 / 3

页数：3

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