Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-infrared photodetectors

被引：0
|
作者：
Piotrowski, TT
Piotrowska, A
Kaminska, E
Piskorski, M
Papis, E
Golaszewska, K
Katcki, J
Ratajczak, J
Adamczewska, J
Wawro, A
Piotrowski, J
Orman, Z
Pawluczyk, J
Nowak, Z
机构：
[1] Inst Electron Technol, PL-02668 Warsaw, Poland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Vigo Syst Ltd, PL-01389 Warsaw, Poland
来源：
OPTO-ELECTRONICS REVIEW | 2001年 / 9卷 / 02期
关键词：
mid-infrared; photodetector; LPE growth; GaSb-based heterostructures; surface passivation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper reports on the design and fabrication of LPE-grown GaSb/n-InxGa1-xAsySb1-y/p-AlxGa1-xAsySb1-y heterojuction photodetectors operating in the 2-2.4 mum wavelength region. Experiments on LPE growth of high-x-content quaternaries as well as optimisation of device processing has been carried our. LPE growth at T approximate to 530 degreesC enabled obtaining lattice matched heterostructures with 19% indium in the active layer In0.19Ga0.81As0.16Sb0.84/Al0.24Ga0.76As0.04Sb0.96 and photodetectors with lambda (c) = 2.25 mum. By increasing the temperature of epitaxial growth to 590 degreesC In0.23Ga0.76As0.18Sb0.82/Al0.30Ca0.70As0.03Sb0.97 heterostructures (with 23% indium content) suitable for photodetectors with lambda (c) = 2.35 mum have been obtained. Mesa-type photodiodes M ere fabricated by RIE in CCl4/H-2 plasma and passivated electrochemically in (NH4)(2)S. These devices are characterised by differential resistance area product up to 400 Ohm cm(2) and the detectivity in the range the range 3x10(10)-2x10(11) cmHz(1/2)/W, in dependence on the photodiode active area and cut-off wavelength.
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页码：188 / 194
页数：7
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