Magnetic properties of asymmetric antirectangular Ni80Fe20 arrays

被引:31
|
作者
Wang, CC [1 ]
Adeyeye, AO [1 ]
Wu, YH [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Informat Storage Mat Lab, Singapore 117576, Singapore
关键词
D O I
10.1063/1.1620682
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetic properties of antirectangular arrays (2x10 mum(2)) embedded into 800 Angstrom thick continuous Ni80Fe20 films with interhole spacing(s) in the range of 2-6 mum have been investigated. We observed that the presence of the rectangular holes strongly modifies the shape of the magnetic hysteresis loop compared with continuous film of the same thickness. Specifically, we observed that the coercivity increases dramatically with the reduction of interhole spacing due to magnetic domain wall pinning, in agreement with our magnetic force microscopy images. Complex magnetotransport curves were obtained, which is not readily explained using the conventional anisotropic magnetoresistance effect. We attribute our results to the contribution by magnetic domains to overall resistivity of the antirectangular structures. From field angle dependent magnetotransport measurements, we are able to deduce the pinning strength for different interhole spacing. (C) 2003 American Institute of Physics.
引用
收藏
页码:6644 / 6648
页数:5
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