Dynamical mean-field theory for the exciton Mott transition in electron-hole systems

被引:6
|
作者
Ogawa, T [1 ]
Tomio, Y [1 ]
Asano, K [1 ]
机构
[1] Osaka Univ, Dept Phys, Toyonaka, Osaka 5600043, Japan
关键词
D O I
10.1088/1742-6596/21/1/018
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In electron-hole (e-h) systems in photoexcited insulators, the exciton Mott transition may take place, which is a typical photoinduced phase transition. To understand how the exciton Mott transition depends on the e-h carrier density and the Coulomb correlation, we study an e-h two-band Hubbard model by means of the dynamical mean-field theory assuming that electron-hole pairs do not condense. The phase diagram on the plane of interactions at zero temperature is obtained. When both electron and hole bands are half-filled, two types of insulating states appear: the Mott-Hubbard insulator and the biexciton-like insulator. Away from half-filling we find another insulating phase, the exciton-like insulator, which is followed by the formation of incoherent (not condensed) e-h pairs, while the Mott-Hubbard insulator phase disappears. The exciton Mott transition is found to be the first-order transition. Linear optical susceptibilities are also discussed.
引用
收藏
页码:112 / 117
页数:6
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