Depth sectioning of individual dopant atoms with aberration-corrected scanning transmission electron microscopy

被引:50
|
作者
Xin, Huolin L. [1 ]
Intaraprasonk, Varat [2 ]
Muller, David A. [2 ]
机构
[1] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA
[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2828990
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ability to detect individual impurity atoms has been greatly enhanced by the development of aberration-corrected electron microscopes. The reduced depth of focus potentially enables three-dimensional reconstructions of impurity atoms from through-focal series. We test the robustness of this depth-sectioning method for detecting impurity atoms in gate oxides using multislice simulations. For amorphous materials, dopants can be reliably imaged, and are accurately described by a simpler three-dimensional linear imaging model. For crystalline materials, however, channeling artifacts can render the signal uninterpretable. These artifacts can be eliminated by orienting the crystal slightly off the zone axis, which still preserves atomic resolution. (c) 2008 American Institute of Physics.
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页数:3
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