Generalised drift-diffusion model of bipolar transport in semiconductors

被引：4
|
作者：
Reznik, D
Gerlach, W
机构：
来源：
ELECTRICAL ENGINEERING | 1996年 / 79卷 / 03期
关键词：
D O I：
10.1007/BF01232790
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A generalisation of the conventional relaxation-time approximation for bipolar transport with electron-hole scattering is presented. A simple phenomenological ansatz leads to Generalised Drift-Diffusion current equations, which contain both conventional Drift-Diffusion equations and matrix-form Drift-Diffusion equations with drag currents as special cases. The effect on carrier transport in semiconductor devices under both low and high injection conditions is discussed analytically and compared with simulation results.
引用
收藏
页码：219 / 225
页数：7
相关论文
共 50 条
12345