Study of interface properties of electrodes for the Alq3 base OLEDs

被引:1
|
作者
Uddin, A [1 ]
Lee, CB [1 ]
Hu, X [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Engn, Singapore 639798, Singapore
来源
Smart Materials III | 2005年 / 5648卷
关键词
molecular electronics; interface injection; electrode; indium-tin-oxide; OLED; carrier transport; INDIUM-TIN-OXIDE; LIGHT-EMITTING DEVICES; THIN-FILMS; INJECTION; ELECTROLUMINESCENCE; SPECTROSCOPY; TRANSPORT; DIPOLES; ALQ(3); DIODES;
D O I
10.1117/12.569743
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the carrier transport properties of amorphous organic material tris (8-hydroxyquinoline) aluminum (Alq(3)) for Al, LiF/Al, NaCl/Al, KBr/Al cathodes and ITO and ITO/HTL anodes at room temperature. The investigation was made by the current - voltage, luminescence - current characteristic measurements. The current density increases by several orders for LiF/Al and NaCl/Al cathodes over that of Al at a given bias voltages The electron injection processes at the metal/organic contact dominate the current - voltage characteristics. The carrier injection seems to be limited by the charge hopping of interfacial molecular sites. We have also developed a process method for the preparation of anodic indium-tin-oxide (ITO) surface for high efficient organic light emitting diodes (OLEDs). X-ray photoelectron spectroscopy (XPS) was used to measure atomic concentration of each element In, Sn, O and C on treated ITO surface. Scanning electron microscopy and atomic force microscopy were used to scan the surface profiles of ITO. The OLED performance considerably improved by the ITO surface treatments as well as by ITO/HTL anode due to the reduction of holes injection barrier between ITO and Alq3 interface.
引用
收藏
页码:114 / 123
页数:10
相关论文
共 50 条
  • [1] Magnetic properties of the Co/Alq3 interface
    Venkatesan, M.
    Tokuc, H.
    Burke, Franklyn
    Szulczewski, G.
    Coey, J. M. D.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [2] Improved efficiency in OLEDs with a thin Alq3 interlayer
    Lian, Jia-rong
    Yuan, Yong-bo
    Cao, Ling-fang
    Zhang, Jie
    Pang, Hong-qi
    Zhou, Yun-fei
    Zhou, Xiang
    JOURNAL OF LUMINESCENCE, 2007, 122 : 660 - 662
  • [3] Metal/AlQ3 interface structures
    Turak, A
    Grozea, D
    Feng, XD
    Lu, ZH
    Aziz, H
    Hor, AM
    APPLIED PHYSICS LETTERS, 2002, 81 (04) : 766 - 768
  • [4] Chemical failure modes of AlQ3-based OLEDs: AlQ3 hydrolysis
    Knox, JE
    Halls, MD
    Hratchian, HP
    Schlegel, HB
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2006, 8 (12) : 1371 - 1377
  • [5] Optical properties of Alq3 films and Alq3/plasmonic heterostructures
    Wagner, H. P.
    Wickremasinghe, N.
    Kaveh, M.
    Ajward, M.
    Wang, X.
    Schmitzer, H.
    Gao, Q.
    Jagadish, C.
    LIGHT MANIPULATING ORGANIC MATERIALS AND DEVICES, 2014, 9181
  • [6] On the origin of exciton formation in dye doped Alq3 OLEDs
    J. A. Gómez
    F. A. Castro
    F. Nüesch
    L. Zuppiroli
    C. F. O. Graeff
    Applied Physics A, 2012, 108 : 727 - 731
  • [7] On the origin of exciton formation in dye doped Alq3 OLEDs
    Gomez, J. A.
    Castro, F. A.
    Nueesch, F.
    Zuppiroli, L.
    Graeff, C. F. O.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 108 (03): : 727 - 731
  • [8] Influence of deposition rate on morphology and optical properties of Alq3, used as emitter in OLEDs
    Shukla, Vivek Kumar
    Tripathi, Vibha
    Datta, Debjit
    Kumar, Satyendra
    PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 913 - 915
  • [9] Impact of Trapped Charge and Interface Defects on the Degradation of the Optical and Electrical Characteristics in NPD/Alq3 OLEDs
    Pinato, Alessandro
    Cester, Andrea
    Meneghini, Matteo
    Wrachien, Nicola
    Tazzoli, Augusto
    Xia, Sean
    Adamovich, Vadim
    Weaver, Michael S.
    Brown, Julie J.
    Zanoni, Enrico
    Meneghesso, Gaudenzio
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) : 178 - 187
  • [10] Interface properties of Alq3/TPD on sputter-cleaned ITO
    Peisert, H
    Schwieger, T
    Knupfer, M
    Golden, MS
    Fink, J
    SYNTHETIC METALS, 2001, 121 (1-3) : 1435 - 1436