Multi-scale modelling of polymer-based optoelectronic devices

被引:0
|
作者
Ramos, Marta M. D. [1 ]
Correia, Helena M. G. [1 ]
Barbosa, Helder M. C. [1 ]
机构
[1] Univ Minho, Dept Fis, P-4710057 Braga, Portugal
关键词
Modelling; Semiconductor polymer; Nanostructure; Current efficiency; FILMS;
D O I
10.1117/12.892105
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The optimization of polymer-based optoelectronic devices such as light-emitting diodes (LEDs), photodetectors and photovoltaic cells requires the understanding how molecular properties and the spatial arrangement of the conjugated strands affect the electronic processes underlying the functioning of these devices. Since some of the important features are determined largely by the individual molecular strands and other features depend strongly on the nanostructure, a multi-scale modelling of materials and device properties is needed. In this work we discuss the atomistic and nanoscale modelling of charge injection, transport and trapping single-carrier diode based on poly(p-phenylene venylene) (PPV), which also applies to other optoelectronic devices.
引用
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页数:5
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