Fault-Tolerant Inverter Operation Based on Si/SiC Hybrid Switches

被引:16
|
作者
Peng, Zishun [1 ]
Wang, Jun [1 ]
Liu, Zeng [1 ]
Dai, Yuxing [1 ,2 ]
Zeng, Guoqiang [2 ]
Shen, Z. John [3 ]
机构
[1] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China
[2] Wenzhou Univ, Natl Local Joint Engn Lab Digitalize Elect Design, Wenzhou 325035, Peoples R China
[3] IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USA
关键词
Silicon carbide; MOSFET; Insulated gate bipolar transistors; Silicon; Circuit faults; Switches; Inverters; Fault tolerance; inverters; redundancy; reliability; switches; RELIABILITY; CONVERTER; DIAGNOSIS; TOPOLOGY;
D O I
10.1109/JESTPE.2019.2952170
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The silicon (Si)/silicon carbide (SiC) hybrid switch comprising a Si insulated gate bipolar translator (IGBT) and a SiC metal-oxide-semiconductor field effect transistor (MOSFET) in parallel offers not only excellent performance and cost tradeoff but also inherent switch-level redundancy for potential power converter fault-tolerant operation. It is possible to operate the power converter even when either the SiC MOSFET or the Si IGBT experiences an open-circuit fault. This article first analyzes various switch failure scenarios and then proposes a novel fault-tolerant control strategy for a single-phase inverter based on the Si/SiC hybrid switches to mitigate a single-point switch failure and maintain inverter operation. Experimental results validate the effectiveness of the proposed fault-tolerant control strategy.
引用
收藏
页码:545 / 556
页数:12
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