Correlation between the bulk modulus and the charge density in semiconductors

被引:42
|
作者
Al-Douri, Y [1 ]
Abid, H [1 ]
Aourag, H [1 ]
机构
[1] Univ Sidi Bel Abbess, Dept Phys, Computat Mat Sci Lab, Sidi Bel Abbess 22000, Algeria
来源
PHYSICA B | 2001年 / 305卷 / 02期
关键词
semiconductors; bulk moduli; phase transitions;
D O I
10.1016/S0921-4526(01)00594-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using the area of the cation side of the electronic charge densities obtained by the empirical pseudopotential method for tetrahedrally bonded semiconductors, a bulk modulus scale is established that is in good agreement with experimental and other authors' results. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:186 / 190
页数:5
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