Highly uniform single crystal ultrathin ZnS nanowires (NWs) with 2 nm diameter and up to 10 mu m length were fabricated using a catalyst-free colloidal chemistry strategy. The nanowires crystallized in hexagonal phase structure with preferential growth along the direction of the (001) basal plane. The strong polarity of the (001) plane composed of Zn cations or S anions drives the oriented attachment of ZnS nanocrystals (NCs) along this direction via electrostatic (or dipole) interaction. The ultrathin ZnS nanowires show intrinsic ferromagnetism at room temperature and other unusual properties related to its unique nature, such as large anisotropic lattice expansion, large blue-shift of UV-vis absorption band of the excition, and photoluminescence spectrum of the exciton band edge. First-principles DFT computation results show that Zn vacancies can induce intrinsic ferromagnetism in these undoped ZnS NWs. The main source of the magnetic moment arises from the unpaired 3p electrons at S sites surrounding the Zn vacancies carrying the magnetic moment ranging from 0.26 to 0.66 mu(B). Calculated results indicate that the magnetic moment of the ultrathin ZnS NWs can be increased by increasing the Zn vacancy concentration without significant energy cost. The calculated magnetization value (1.96 or 0.40 emu/g for Zn vacancies on the surface of NWs or inside, respectively) by Zn53S54 supercell model is larger than our experimental value (0.12 emu/g at 1.8 K and 0.05 emu/g at 300 K), but the ferromagnetic result is qualitatively in agreement.
机构:
Key Lab for Polar Materials and Devices of Ministry of Education, Department of Electronic Engineering, East China Normal UniversityKey Lab for Polar Materials and Devices of Ministry of Education, Department of Electronic Engineering, East China Normal University
Wu J.
Yu K.
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Key Lab for Polar Materials and Devices of Ministry of Education, Department of Electronic Engineering, East China Normal UniversityKey Lab for Polar Materials and Devices of Ministry of Education, Department of Electronic Engineering, East China Normal University
Yu K.
Zhang Y.
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Department of Mathematics and Physics, Luoyang Institute of Science and TechnologyKey Lab for Polar Materials and Devices of Ministry of Education, Department of Electronic Engineering, East China Normal University
Zhang Y.
Li L.
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Key Lab for Polar Materials and Devices of Ministry of Education, Department of Electronic Engineering, East China Normal UniversityKey Lab for Polar Materials and Devices of Ministry of Education, Department of Electronic Engineering, East China Normal University
Li L.
Zhu Z.
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Key Lab for Polar Materials and Devices of Ministry of Education, Department of Electronic Engineering, East China Normal UniversityKey Lab for Polar Materials and Devices of Ministry of Education, Department of Electronic Engineering, East China Normal University
机构:
Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
Liu, K. W.
Sakurai, M.
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Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
Sakurai, M.
Aono, M.
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Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
机构:
E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
E China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaE China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
Wu, Jin
Yu, Ke
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E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
E China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaE China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
Yu, Ke
Zhang, Yongsheng
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Luoyang Inst Sci & Technol, Dept Math & Phys, Luoyang 471023, Peoples R ChinaE China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
Zhang, Yongsheng
Li, Lijun
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E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
E China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaE China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
Li, Lijun
Zhu, Ziqiang
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E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
E China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaE China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
机构:
E China Normal Univ, Minist Educ China, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Minist Educ China, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Li, Lijun
Yu, Ke
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E China Normal Univ, Minist Educ China, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Minist Educ China, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Yu, Ke
Tang, Zheng
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E China Normal Univ, Minist Educ China, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Minist Educ China, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Tang, Zheng
Zhu, Ziqiang
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E China Normal Univ, Minist Educ China, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Minist Educ China, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Zhu, Ziqiang
Wan, Qing
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Hunan Univ, Micronano Technol Res Ctr, Changsha 410082, Hunan, Peoples R ChinaE China Normal Univ, Minist Educ China, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China