Transition of crystalline orientation of yttria-stabilized zirconia films grown by pulsed laser deposition

被引：8
|
作者：
Zhang, X. [1 ]
Berdahl, P. [1 ]
Klini, A. [2 ]
Fotakis, C. [2 ]
Mao, S. S. [1 ,3 ]
机构：
[1] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
[2] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Iraklion 71110, Crete, Greece
[3] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 91卷 / 03期
关键词：
D O I：
10.1007/s00339-008-4475-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have synthesized 5 wt. %-yttria-stabilized zirconia (YSZ) films on stainless steel and glass substrates by pulsed laser deposition (PLD) at substrate temperatures between 60 and 600 degrees C and oxygen pressures from 0.1 to 1000 mTorr. While highly (101)-oriented tetragonal YSZ films are obtained at intermediate oxygen pressures, near complete (001)-oriented tetragonal films are achieved at lower oxygen pressures, with a full width at half maximum X-ray peak of only 0.4 degrees. The results can be attributed to surface energy-induced orientation; that is, the lowest surface energy plane of the YSZ films changes from (101) plane at intermediate pressures to the (001) plane at lower oxygen pressures due to surface relaxation.
引用
收藏
页码：407 / 410
页数：4
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