Fast preparation of a single-hole spin in an InAs/GaAs quantum dot in a Voigt-geometry magnetic field

被引：32

作者：

Godden, T. M. ^{[1
]}

Quilter, J. H. ^{[1
]}

Ramsay, A. J. ^{[1
]}

Wu, Yanwen ^{[2
,3
]}

Brereton, P. ^{[2
]}

Luxmoore, I. J. ^{[1
]}

Puebla, J. ^{[1
]}

Fox, A. M. ^{[1
]}

Skolnick, M. S. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 OHE, England

[3] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

ELECTRON-SPIN; MEMORY;

D O I：

10.1103/PhysRevB.85.155310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is experimentally investigated. For a dot with a typical bright-exciton fine-structure splitting of 17 mu eV, the fidelity of the spin preparation is limited to 0.75, with optimum preparation occurring when the effective fine structure of the bright exciton matches the in-plane hole Zeeman energy. In principle, higher fidelities can be achieved byminimizing the bright-exciton fine-structure splitting.

引用

页数：8

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