Manipulating metal-to-insulator transition temperature in manganite-titanate junction by reverse electrical bias

The metal-to-insulator transition (MIT) is a prominent feature of manganites and also occurs in a few manganite junctions. In this study we prepared La0.67Sr0.33MnO3/1 wt% Nb-doped SrTiO3 junctions and detected their MIT temperature (T-MIT) at different reverse biases. We show that TMIT can be significantly modulated from 150 to 260K when the bias voltage increases from -0.3 to -2.0V. This phenomenon could be a combined effect of charge tunnelling across the junction and the reduction of film thickness of La0.67Sr0.33MnO3.