Band offsets in ZrO2/InGaZnO4 heterojunction

被引：32
|
作者：
Yao, Jianke [1 ]
Zhang, Shengdong [1 ,2 ]
Gong, Li [3 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Sch Comp & Informat Engn, Shenzhen 518055, Peoples R China
[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[3] Sun Yat Sen Univ, Instrumental Anal & Res Ctr, Guangzhou 510275, Guangdong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 09期
关键词：
AMORPHOUS OXIDE SEMICONDUCTORS; RAY PHOTOELECTRON-SPECTROSCOPY; K GATE OXIDES; TRANSISTORS;
D O I：
10.1063/1.4750069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-V) of amorphous InGaZnO4 (a-IGZO)/ZrO2 heterostructure deposited by DC and RF sputtering at room temperature, respectively. A value of Delta E-V = 0 eV was obtained by using the Ga and Zn 2p(3) and In 3d(3) energy levels as references. Given the experimental band gap of 3.1 eV and 5.8 eV for the a-IGZO and ZrO2, respectively, this would indicate a conduction band offset of 2.7 eV in the system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750069]
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页数：4
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