Optical proximity correction of alternating phase shift masks for 0.18 mu m KrF lithography

被引：3
|
作者：
Yasuzato, T
Ishida, S
Shioiri, S
Tanabe, H
Kasama, K
机构：
来源：
OPTICAL MICROLITHOGRAPHY X | 1997年 / 3051卷
关键词：
lithography; alternating phase shift mask; optical proximity correction; jog;
D O I：
10.1117/12.275992
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical proximity correction (OPC) was applied to alternating phase shift masks to improve printed resist pattern fidelity. Mask patterns were modified with jog type corrections. DRAM cell patterns were exposed by using a 0.55 NA, 0.36/0.55 sigma, KrF excimer laser stepper onto 0.5 mu m thick chemically amplified negative resist. With 0.55 sigma, OPC was effective and printed resist pattern was very close to designed one. However, with 0.36 sigma, large pattern deformation was observed due to coma aberration.
引用
收藏
页码：751 / 762
页数：4
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