The properties of ground state of excitons in GaAs/Ga1-xAlxAs quantum wells in a perpendicular electric field

We have calculated the effect of an electric field on energy position of the exciton ground state in GaAs/Ga1-xAlxAs quantum wells, the result shows that mechanism of quantum confinement plays an important role on the exciton binding energy, for the narrow thickness QW, the exciton binding energy is slightly affected by electric field and for large thickness QW, however, the exciton binding energy has a quadratic Stark shift at low electric field and this Shift becomes more and more show with increasing field. This mechanism in GaAs/Ga1-xAlxAs QW can be applied to electric field induced optical sensitive devices.