Embedded Power Electronics on the way to be launched

Embedded components technologiy has launched its implementation in volume products demanding for highest miniaturization level. Smart phones have been the enablers for this new technology using the capabilities of embedded components. All along the European project EmPower has been the enabler for the development of a new embedding technology for high power components like MOSPET, 1GBT and power diodes and starting point for the industrialization for new power packages and power modules in AT&S. Technological challenges like the embedding of large dies require for new embedding concepts which consequently reduces thermal resistance and package inductance. CTE mismatch between large dies and the PCB construction required basic studies with new materials to enable the embedded power electronics in the kW range. All embedded semiconductors require copper terminations in order to be compatible JOr connecting with galvanic micro-vial. The back end processes at the semiconductor side are not prepared for this challenge, especially not for components with vertical current flow. This barrier was identified at the setup of EmPower and a double sided wafer plating equipment for galvanic deposition of copper is developed in the frame of the project.