Small valence band offset in (010) InS/CuI heterojunction diodes

被引：4
|
作者：
Konovalov, I. [1 ]
Makhova, L. [1 ]
机构：
[1] Univ Leipzig, Wilhelm Ostwald Inst Phys & Theoret Chem, D-04103 Leipzig, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 02期
关键词：
D O I：
10.1063/1.2753094
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Heterojunctions between the (010) facet of an orthorhombic InS single crystal and evaporated CuI show a remarkably small valence band offset of 0.15 eV (cliff). This minor band offset allows rather good injection conditions for holes. In accordance to this result, the current-voltage characteristics of the device are rectifying and show a large forward voltage. (C) 2007 American Institute of Physics.
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页数：3
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