Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantation

被引：2
|
作者：
Koyama, M
Akita, Y
Cheong, C
Koh, M
Matsukawa, T
Horita, K
Shigeta, B
Ohdomari, I
机构：
[1] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 169,JAPAN
[2] WASEDA UNIV,KAGAMI MEM LAB MAT SCI & TECHNOL,SHINJUKU KU,TOKYO 169,JAPAN
[3] TOSHIBA CO LTD,ULSI RES LAB,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN
来源：
APPLIED SURFACE SCIENCE | 1996年 / 104卷
关键词：
D O I：
10.1016/S0169-4332(96)00153-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In order to characterize the isolated defect clusters in Si crystal induced by single ion implantation (SII), a quantitative analysis of forward I-V characteristics of ion irradiated Schottky diodes was performed. A very good linearity was found between the number of single ions and the number of recombination centers. By a careful choice of SII condition, in order to a linear response of a device function to the single ion dose, this quantitative analysis could be applied to the test of device immunity against ion irradiation and to the diagnosis of the process integrity.
引用
收藏
页码：253 / 256
页数：4
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