In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

被引：1

作者：

Bucamp, A. ^{[1
]}

Coinon, C. ^{[1
]}

Lepilliet, S. ^{[1
]}

Troadec, D. ^{[1
]}

Patriarche, G. ^{[2
]}

Diallo, M. H. ^{[1
]}

Avramovic, V ^{[1
]}

Haddadi, K. ^{[1
]}

Wallart, X. ^{[1
]}

Desplanque, L. ^{[1
]}

机构：

[1] Univ Lille, CNRS, Cent Lille, Univ Polytech Hauts de France,UMR 8520 IEMN, F-59000 Lille, France

[2] Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France

来源：

NANOTECHNOLOGY | 2022年 / 33卷 / 14期

关键词：

selective area growth; molecular beam epitaxy; in-plane nanowire; Esaki tunnel diodes; GAAS; 001;

D O I：

10.1088/1361-6528/ac45c5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.

引用

页数：9

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