Characterization of AlGaN/GaN High Electron Mobility Transistor Grown on Silicon Carbide Devices with a Gate Length Lg=0.15 μm

In this paper we present static measurements and defect analysis performed on AlGaN/GaN/SiC HEMTs. I-d-V-ds and I-g-V-gs characteristics show anomalies like: leakage current, degradation on saturation current, hysteresis effect and kink effect. These anomalies on output characteristics change when we varied measurements conditions for example temperature or polarization; which is thought to be associated with electrically active defects in the heterostructure. The related deep levels are directly characterized by Conductance (current) Deep Level Transient Spectroscopy (CDLTS) method. Hereby we have detected two carrier traps labeled H-1 and B-1 with activation energy of 0.82 eV and 0.072 eV. Finally, the correlation between the anomalies observed on the output characteristics and defects is discussed.