Simulation of the frequency behavior of external-cavity semiconductor lasers

被引：7
|
作者：
Houssin, M [1 ]
Fermigier, B [1 ]
Desaintfuscien, M [1 ]
机构：
[1] Univ Paris Sud, Observ Paris, Lab Horloge Atom, F-75014 Paris, France
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2003年 / 39卷 / 07期
关键词：
linewidth-enhancement factor; optical feedback; semiconductor diodes; spectral analysis;
D O I：
10.1109/JQE.2003.813186
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theoretical model of semiconductor lasers mounted in external cavities is developed. The modes' frequencies and gains are calculated. We study the frequency of the oscillating mode versus the laser injection current. We explain its hysteresis behavior by introducing in the model the coupling between the semiconductor gain and its. index of refraction induced by fluctuations in carrier density. We also determine the influence of the laser diode output facet reflection coefficient on mode hops and frequency tuning. Theoretical simulations coincide well with experimental observations.
引用
收藏
页码：833 / 837
页数：5
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