Photonic density of states maps for design of photonic crystal devices

被引：8

作者：

Sukhoivanov, I. A. ^{[1
]}

Guryev, I. V. ^{[2
]}

Lucio, J. A. Andrade ^{[1
]}

Mendez, E. Alvarado ^{[1
]}

Trejo-Duran, M. ^{[1
]}

Torres-Cisneros, M. ^{[1
]}

机构：

[1] Univ Guanajuato, Salamanca 36730, Gto, Mexico

[2] Natl Univ Radio Elect, UA-61166 Kharkov, Ukraine

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 3-4期

关键词：

photonic crystal; photonic density of states map; photonic crystal device; transmittance map;

D O I：

10.1016/j.mejo.2007.07.091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, it has been investigated whether photonic density of states maps can be applied to the design of photonic crystal-based devices. For this reason, comparison between photonic density of states maps and transmittance maps was carried out. Results of comparison show full correspondence between these characteristics. Photonic density of states maps appear to be preferable for the design of photonic crystal devices, than photonic band gap maps presented earlier and than transmittance maps shown in the paper. (c) 2007 Elsevier Ltd. All rights reserved.

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页码：685 / 689

页数：5

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