New calibration method of analytical models for ion implantation

被引：0

作者：

Roger, F ^{[1
]}

Scheiblin, P ^{[1
]}

Poncet, D ^{[1
]}

Le Carval, G ^{[1
]}

Laviron, C ^{[1
]}

Holliger, P ^{[1
]}

Guichard, E ^{[1
]}

Caire, JP ^{[1
]}

机构：

[1] SILVACO Data Syst, Actimart Gieres, F-38610 Gieres, France

来源：

2000 5TH INTERNATIONAL WORKSHOP ON STATISTICAL METROLOGY | 2000年

关键词：

D O I：

10.1109/IWSTM.2000.869302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an efficient and original methodology for global and predictive modeling of ion implantation. The doping profiles are fitted using a linear combination of Legendre Polynomials, which coefficients are expressed as a function of the main process parameters from Response Surface Methodology. A Design of Experiments, based on accurate SIMS measurements of dedicated implantation experiments, insures an optimal model calibration. This approach allows the easy generation of calibrated implanted profiles, using the experimental data available in each fab.

引用

页码：19 / 22

页数：4

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