Magnetoresistance devices based on single-walled carbon nanotubes

被引:12
|
作者
Hod, O
Rabani, E [1 ]
Baer, R
机构
[1] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Chem, IL-69978 Tel Aviv, Israel
[2] Hebrew Univ Jerusalem, Inst Chem, IL-91904 Jerusalem, Israel
[3] Hebrew Univ Jerusalem, Lise Meitner Ctr Quantum Chem, IL-91904 Jerusalem, Israel
来源
JOURNAL OF CHEMICAL PHYSICS | 2005年 / 123卷 / 05期
基金
以色列科学基金会;
关键词
D O I
10.1063/1.1993551
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We demonstrate the physical principles for the construction of a nanometer-sized magnetoresistance device based on the Aharonov-Bohm effect [Phys. Rev. 115, 485 (1959)]. The proposed device is made of a short single-walled carbon nanotube (SWCNT) placed on a substrate and coupled to a tip/contacts. We consider conductance due to the motion of electrons along the circumference of the tube (as opposed to the motion parallel to its axis). We find that the circumference conductance is sensitive to magnetic fields threading the SWCNT due to the Aharonov-Bohm effect, and show that by retracting the tip/contacts, so that the coupling to the SWCNT is reduced, very high sensitivity to the threading magnetic field develops. This is due to the formation of a narrow resonance through which the tunneling current flows. Using a bias potential the resonance can be shifted to low magnetic fields, allowing the control of conductance with magnetic fields of the order of 1 T. (C) 2005 American Institute of Physics.
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页数:4
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