Synthesis of PZT thin films by sol-gel process and its characterization

被引：0

作者：

Singhai, R ^{[1
]}

Tiwari, V

Sreenivas, K

机构：

[1] Dr HS Gour Univ, Dept Chem, Sagar 470003, India

[2] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

来源：

INDIAN JOURNAL OF CHEMISTRY SECTION A-INORGANIC BIO-INORGANIC PHYSICAL THEORETICAL & ANALYTICAL CHEMISTRY | 2004年 / 43卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ferroelectric Pb(Zr,Ti)O-3 (PZT) thin films have been fabricated by the alkoxide based sol-gel method. PZT stock solutions have been spin coated on glass, silicon and metallised silicon substrate. The coating is repeated until 0.6 mum thickness of film has been deposited on various substrates. PZT thin films have been annealed at various temperatures and characterized by X-ray diffraction and scanning electron microscope. Dielectric constant and dielectric loss of PZT thin films has also been measured at different frequencies.

引用

页码：282 / 284

页数：3

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