Optoelectronic response and excitonic properties of monolayer MoS2

被引:25
|
作者
Ben Amara, Imen [1 ]
Ben Salem, Emna [1 ,2 ]
Jaziri, Sihem [1 ,3 ]
机构
[1] Univ Tunis El Manar, Fac Sci Tunis, Phys Mat Condensee Lab, Campus Univ, Tunis 2092, Tunisia
[2] Inst Preparatoire Etud Ingn Tunis, 2 Rue Jawaher Lel Nahrou Monfleury, Tunis 1008, Tunisia
[3] Univ Carthage, Fac Sci Bizerte, Phys Mat Lab, Jarzouna 7021, Tunisia
关键词
FEW-LAYER MOS2; ELECTRONIC-PROPERTIES; OPTICAL-TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTORS; TRIONS;
D O I
10.1063/1.4958948
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ab initio, electronic energy bands of MoS2 single layer are reported within the local density functional approximation. The inclusion of spin orbit coupling reveals the presence of two excitons A and B. We also discuss the change of physical properties of MoS2 from multilayer and bulk counterparts. The nature of the band gap changes from indirect to direct when the thickness is reduced to a single monolayer. The imaginary and real dielectric functions are investigated. Refractive index and birefringence are also reported. The results suggest that MoS2 is suitable for potential applications in optoelectronic and photovoltaic devices. The ab initio study is essential to propose the crucial parameters for the analytical model used for A-B exciton properties of the monolayer MoS2. From a theoretical point of view, we consider how the exciton behavior evolves under environmental dielectrics. Published by AIP Publishing.
引用
收藏
页数:7
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