Visible Photoluminescence and Electroluminescence from a-SiNx:H/SiO2 Multilayers With Lateral Carrier Injection

被引：0
|
作者：
Kamyab, Lobna [1 ]
Rusli [1 ]
Bin, Yu Ming [2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
[2] Inst Microelect, Singapore, Singapore
来源：
2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2010年
关键词：
Amorphous Silicon Nitride; multilayers; Electroluminescence; Current Injection; Optoelectronics; SILICON-NITRIDE; NANOCRYSTALS; LUMINESCENCE; EFFICIENCY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report photoluminescence (PL) and electroluminescence (EL) from a-SiNx: H/SiO2 multi-layers. The PL peak and optical bandgap are tunable by varying the a-SiNx: H thickness. We report a lateral current injection method to enhance the EL efficiency of the multilayer structures.
引用
收藏
页码：353 / 355
页数：3
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