Highly ordered L1(0) FePt-oxide thin films with perpendicular texture and small grains were fabricated on a TiC underlayer along with a RuAl small grain size layer and a MgO seedlayer. The epitaxial growth from the MgO seedlayer to the TiC RuAl grain size defining underlayer to FePt magnetic layer was studied. Perpendicular texture can be further improved by adjusting the thickness of each layer to optimize the in-plane stain. From our microstructure study, TiC/RuAl grain size defining layer was found effective in reducing the volume fraction of oxide in the film and the center-to-center grain size of FePt grains. With a thin Ag sacrificial layer inserted between TiC and FePt magnetic layer, a smaller grain size can be achieved, the ordering temperature was lowered, and the (001) texture of FePt was enhanced.
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 34141, South Korea
Rahman, M. A.
Park, J. K.
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 34141, South Korea
机构:
Chuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, JapanChuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan
Futamoto, Masaaki
Shimizu, Tomoki
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Chuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, JapanChuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan
Shimizu, Tomoki
Ohtake, Mitsuru
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Chuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, JapanChuo Univ, Fac Sci & Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan
机构:
Fudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R ChinaFudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
Xu, Z.
Liu, X. D.
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Zhongshan Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Zhongshan Sun Yat Sen Univ, Dept Phys, Guangzhou 510275, Guangdong, Peoples R ChinaFudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
Liu, X. D.
Gao, R. X.
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Zhongshan Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Zhongshan Sun Yat Sen Univ, Dept Phys, Guangzhou 510275, Guangdong, Peoples R ChinaFudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
Gao, R. X.
Chen, Z. F.
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Zhongshan Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Zhongshan Sun Yat Sen Univ, Dept Phys, Guangzhou 510275, Guangdong, Peoples R ChinaFudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
Chen, Z. F.
Lai, T. S.
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Zhongshan Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Zhongshan Sun Yat Sen Univ, Dept Phys, Guangzhou 510275, Guangdong, Peoples R ChinaFudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
Lai, T. S.
Hu, H. N.
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Fudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R ChinaFudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
Hu, H. N.
Zhou, S. M.
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Fudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R ChinaFudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
Zhou, S. M.
Bai, X. J.
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Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R ChinaFudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
Bai, X. J.
Du, J.
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Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R ChinaFudan Univ, Appl Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China