Two-Dimensional Optical Control of Electron Spin Orientation by Linearly Polarized Light in InGaAs

被引：11

作者：

Schmalbuch, K. ^{[1
,2
]}

Goebbels, S. ^{[1
,2
]}

Schaefers, Ph. ^{[1
,2
]}

Rodenbuecher, Ch. ^{[1
,2
]}

Schlammes, P. ^{[1
,2
]}

Schaepers, Th. ^{[2
,3
]}

Lepsa, M. ^{[2
,3
]}

Guentherodt, G. ^{[1
,2
]}

Beschoten, B. ^{[1
,2
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany

[2] Julich Aachen Res Alliance, JARA Fundamentals Future Informat Technol, Aachen, Germany

[3] Forschungszentrum Julich, Inst Bio & Nanosyst, D-52428 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 24期

关键词：

GALLIUM-ARSENIDE; GAAS;

D O I：

10.1103/PhysRevLett.105.246603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InxGa1-xAs. By changing the incident linear polarization direction we can selectively excite spins in both polar and transverse directions. These directions can be identified by the phase during spin precession using time-resolved Faraday rotation. We show that the spin orientations do not depend on the crystal axes suggesting an extrinsic excitation mechanism.

引用

页数：4

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