An S-Band Dual-Channel Receiver Module Based on the Technology of TSV

被引:0
|
作者
Tang, ZhongJun [1 ]
He, ShuWei [1 ]
Chen, Yijun [1 ]
Hu, LiuLin [1 ]
机构
[1] Chengdu Ganide Technol CO Ltd, Chengdu, Peoples R China
关键词
GCPW; RF; Receiver module; through silicon via (TSV);
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the technology of through silicon via (TSV) is applied to radio frequency (RF) receiver module. A grounded coplanar waveguide (GCPW) with TSV is proposed, through the simulation, and the improvement of TSV on RF transmission performance is studied, including TSV's aperture size, density, arrangement and so on. This paper also studies basic components model such as resistance, capacitance and inductance on the TSV motherboard. Then, an S-band dual-channel receiver module based on the technology of TSV is presented. Sixteen chips are integrated in the receiver module such as amplifier chips, power splitter chips, phase shifter chips and attenuator chips. The size of the final receiver module we proposed is 25mm X 18mm X 1.5mm, which is 2.5% of traditional RF receiver module, and the package is 8g, which is also 2.5% of the traditional RF receiver module.
引用
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页数:4
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