Manipulating fully spin-polarized edge currents in graphene ribbon
被引:3
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作者:
Xu, Lei
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机构:
Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Xu, Lei
[1
,2
]
An, Jin
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机构:
Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
An, Jin
[1
,2
]
Gong, Chang-De
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机构:
Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter Phys, Jinhua 321004, Peoples R China
Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Gong, Chang-De
[1
,2
,3
,4
]
机构:
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter Phys, Jinhua 321004, Peoples R China
[4] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China
Electron fully spin-polarized edge states in graphene emerged at the interfaces of a nonuniform magnetic field are studied numerically in a tight-binding model, with both the orbital and Zeeman-splitting effects of magnetic field considered. We show that the fully spin-polarized currents can be manipulated by a gate voltage. In order to make use of the fully spin-polarized currents in the spin-related transport, a three-terminal experiment is designed and expected to export the fully spin-polarized currents. This may have important applications in spin-based nanodevices.
机构:
Univ Rey Juan Carlos, Dept Matemat Aplicada Ciencia & Ingn Mat & Tecnol, ESCET, C Tulipan S-N, Madrid 28933, SpainUniv Rey Juan Carlos, Dept Matemat Aplicada Ciencia & Ingn Mat & Tecnol, ESCET, C Tulipan S-N, Madrid 28933, Spain
Santos, Hernan
Latge, A.
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机构:
Univ Fed Fluminense, Inst Fis, Ave Litoranea, BR-24210340 Niteroi, RJ, BrazilUniv Rey Juan Carlos, Dept Matemat Aplicada Ciencia & Ingn Mat & Tecnol, ESCET, C Tulipan S-N, Madrid 28933, Spain
Latge, A.
Brey, L.
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机构:
CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, SpainUniv Rey Juan Carlos, Dept Matemat Aplicada Ciencia & Ingn Mat & Tecnol, ESCET, C Tulipan S-N, Madrid 28933, Spain
Brey, L.
Chico, Leonor
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机构:
CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, SpainUniv Rey Juan Carlos, Dept Matemat Aplicada Ciencia & Ingn Mat & Tecnol, ESCET, C Tulipan S-N, Madrid 28933, Spain
机构:
Hefei Normal Univ, Dept Math, Hefei 230061, Peoples R ChinaHefei Normal Univ, Dept Math, Hefei 230061, Peoples R China
Ding, Hong
Zheng, X. H.
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机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaHefei Normal Univ, Dept Math, Hefei 230061, Peoples R China
机构:
Univ Sao Paulo, Inst Fis, BR-05508090 Sao Paulo, SP, Brazil
Univ Nacl Colombia, Dept Fis, Bogota 5997, ColombiaUniv Sao Paulo, Inst Fis, BR-05508090 Sao Paulo, SP, Brazil
Caro, Rodrigo Castellanos
dos Santos, Maria Cristina
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机构:
Univ Sao Paulo, Inst Fis, BR-05508090 Sao Paulo, SP, BrazilUniv Sao Paulo, Inst Fis, BR-05508090 Sao Paulo, SP, Brazil