Magnetic and electric properties of Fe-doped ITO thin films

被引:14
|
作者
Ohno, T.
Kawahara, T.
Murasugi, M.
Tanaka, H.
Kawai, T.
Kohiki, S.
机构
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[2] Kyushu Inst Technol, Dept Mat Sci, Kitakyushu, Fukuoka 8048550, Japan
关键词
Fe-doped ITO film; pulsed-laser deposition; room-temperature ferromagnetism; magnetic iron-oxide cluster;
D O I
10.1016/j.jmmm.2006.10.781
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Films of Fe-doped ITO were epitaxially grown at oxygen (including 8% ozone) partial pressures of 5, 1, 1 x 10(-1),1 x 10(-2), and 1 x 10(-3) Pa on yttria-stabilized zirconia substrates by a pulsed-laser deposition method. Magnetic and electric properties of the films varied systematically with the oxygen partial pressure. The films grown at 5 and 1 Pa were paramagnetic and semiconducting, that at 10(-1) Pa was ferromagnetic and semiconducting, and those at 10(-2) and 10(-3) Pa were ferromagnetic and metallic. The Fe-ITO films grown at the pressure below 10(-1) Pa exhibited room-temperature ferromagnetism. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:E717 / E719
页数:3
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