Composition control and surface defects of MBE-grown HgCdTe

被引：29
|
作者：
He, L
Wu, Y
Chen, L
Wang, SL
Yu, MF
Qiao, YM
Yang, JR
Li, YJ
Ding, RJ
Zhang, QY
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
defects; molecular beam epitaxy; tellurites; semiconducting II-VI materials; infrared devices;
D O I：
10.1016/S0022-0248(01)00801-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The results on composition control and surface defect study of molecular beam epitaxial (MBE)-grown Hg1-xCdxTe are described. In the long wavelength regime, the standard deviation in x values determined by FTIR and ellipsometry measurements was 0.013. Good composition reproducibility was achieved. A variety of surface defects was observed and their origins are discussed. The optimized growth window for obtaining a good morphological surface was determined. By careful efforts in substrates preparation as well as growth control, the averaged density of surface defects (>2 mum) for 2 in 10 mum-thick HgCdTe wafers was determined to be 300 cm(-2). LW 256 x 1 linear focal plane arrays were fabricated on MBE-grown HgCdTe epilayers. An average detectivity D-lambda* of 3.5 x 10(10)cm Li root Hz W-1 with a non-uniformity factor of 8.8% was obtained. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：677 / 682
页数：6
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