Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation

被引：3

作者：

Wang, Chao-Hsun ^{[1
,2
]}

Chang, Shih-Pang ^{[1
,2
]}

Ku, Pu-Hsi ^{[1
,2
]}

Lan, Yu-Pin ^{[1
,2
]}

Lin, Chien-Chung ^{[3
]}

Kuo, Hao-Chung ^{[1
,2
]}

Lu, Tien-Chang ^{[1
,2
]}

Wang, Shing-Chung ^{[1
,2
]}

Chang, Chun-Yen ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Coll Photon, Inst Photon Syst, Tainan 71150, Taiwan

[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 04期

关键词：

D O I：

10.1143/APEX.5.042101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Efficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[1] Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation
Lin, Da-Wei
Wang, Chao-Hsun
Chang, Shih-Pang
Ku, Pu-Hsih
Lan, Yu-Pin
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
Chang, Chun-Yen
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
[2] Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes
Hunag, Yang
Liu, Zhiqiang
Yi, Xiaoyan
Guo, Yao
Wu, Shaoteng
Yuan, Guodong
Wang, Junxi
Wang, Cuohong
Li, Jinmin
MODERN PHYSICS LETTERS B, 2016, 30 (20):
[3] Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes
Bochkareva, N. I.
Rebane, Y. T.
Shreter, Y. G.
APPLIED PHYSICS LETTERS, 2013, 103 (19)
[4] Improvement of the droop efficiency in InGaN-based light-emitting diodes by growing on GaN substrate
Fang, Yen-Hsiang
Xuan, Rong
Chao, Chu-Li
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 786 - 789
[5] Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers
Tong Jin-Hui
Zhao Bi-Jun
Wang Xing-Fu
Chen Xin
Ren Zhi-Wei
Li Dan-Wei
Zhuo Xiang-Jing
Zhang Jun
Yi Han-Xiang
Li Shu-Ti
CHINESE PHYSICS B, 2013, 22 (06)
[6] Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers
童金辉
赵璧君
王幸福
陈鑫
任志伟
李丹伟
卓祥景
章俊
易翰翔
李述体
Chinese Physics B, 2013, 22 (06) : 655 - 659
[7] Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis
Meng, Xiao
Wang, Lai
Hao, Zhibiao
Luo, Yi
Sun, Changzheng
Han, Yanjun
Xiong, Bing
Wang, Jian
Li, Hongtao
APPLIED PHYSICS LETTERS, 2016, 108 (01)
[8] Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes
Son, Jun Ho
Lee, Jong-Lam
OPTICS EXPRESS, 2010, 18 (06): : 5466 - 5471
[9] Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells
Han, Sang-Heon
Lee, Dong-Yul
Shim, Hyun-Wook
Kim, Gwon-Chul
Kim, Young Sun
Kim, Sung-Tae
Lee, Sang-Jun
Cho, Chu-Young
Park, Seong-Ju
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (35)
[10] Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
Dai, Qi
Shan, Qifeng
Wang, Jing
Chhajed, Sameer
Cho, Jaehee
Schubert, E. Fred
Crawford, Mary H.
Koleske, Daniel D.
Kim, Min-Ho
Park, Yongjo
APPLIED PHYSICS LETTERS, 2010, 97 (13)

← 1 2 3 4 5 →