Nonvolatile nanocrystal floating gate memory with NON tunnel barrier

被引：0

作者：

Baik, SJ ^{[1
]}

Choi, SY ^{[1
]}

Chung, UI ^{[1
]}

Moon, JT ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Device Solut Network, Proc Dev Team, Memory Div, Yongin 449711, Gyeonggi Do, South Korea

来源：

ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanocrystal floating gate memory has potential advantage in high-density floating gate memory for its superior scalability than conventional structure. However, the retention and small sensing window has been remained as the main issues for practical applications. In this work, we propose nitride/oxide/nitride (NON) tunnel barrier, which is more sensitive to the g-ate bias than the uniform oxide barrier, and present real nonvolatile memory with 1V window after 10 years at 85degreesC with programming at 8V, 10mus and erasing at -8V, 100mus.

引用

页码：509 / 511

页数：3

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