Comment on "Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing"

被引：7
|
作者：
Lin, YJ [1 ]
Wu, KC [1 ]
机构：
[1] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 25期
关键词：
D O I：
10.1063/1.1634693
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5319 / 5320
页数：2
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