Nano Josephson superconducting tunnel junctions in YBa2Cu3O7-δ directly patterned with a focused helium ion beam

被引:0
|
作者
Cybart, Shane A. [1 ,2 ]
Cho, E. Y. [1 ]
Wong, T. J. [1 ]
Wehlin, Bjoern H. [1 ]
Ma, Meng K. [1 ]
Huynh, Chuong [3 ]
Dynes, R. C. [1 ,2 ]
机构
[1] Univ Calif San Diego, Dept Phys, Oxide Nano Elect Lab, La Jolla, CA 92093 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Carl Zeiss Microscopy LLC, Peabody, MA 01960 USA
关键词
TRANSITION; DAMAGE;
D O I
10.1038/NNANO.2015.76
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Since the discovery of the high-transition-temperature superconductors (HTSs), researchers have explored many methods to fabricate superconducting tunnel junctions from these materials for basic science purposes and applications. HTS circuits operating at liquid-nitrogen temperatures (similar to 77 K) would significantly reduce power requirements in comparison with those fabricated from conventional superconductors. The difficulty is that the superconducting coherence length is very short and anisotropic in these materials, typically similar to 2 nm in the a-b plane and similar to 0.2 nm along the c axis. The electrical properties of Josephson junctions are therefore sensitive to chemical variations and structural defects on atomic length scales(1). To make multiple uniform HTS junctions, control at the atomic level is required. In this Letter we demonstrate all-HTS Josephson superconducting tunnel junctions created by using a 500-pm-diameter focused beam of helium ions to directly write tunnel barriers into YBa2Cu3O7-delta (YBCO) thin films. We demonstrate the ability to control the barrier properties continuously from conducting to insulating by varying the irradiation dose. This technique could provide a reliable and reproducible pathway for scaling up quantum-mechanical circuits operating at liquid-nitrogen temperatures, as well as an avenue to conduct novel planar superconducting tunnelling studies for basic science.
引用
收藏
页码:598 / 602
页数:5
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