Vertical longitudinal magnetoresistance of semiconductor superlattices

被引:5
|
作者
Pusep, YA [1 ]
Gusev, GM
Chiquito, AJ
Sokolov, SS
Bakarov, AK
Toropov, AI
Leite, JR
机构
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil
[3] Natl Acad Sci Ukraine, Inst Low Temp Phys & Engn, UA-61164 Kharkov, Ukraine
[4] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
关键词
D O I
10.1103/PhysRevB.63.165307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vertical longitudinal magnetoresistance (VLMR) caused by the peculiar shape of the Fermi surface of a superlattice has been observed in GaAs/AlxGa1-xAs superlattices. This VLMR occurs when the electrons occupy the open Fermi surface and their motion in the plane of the layers is quantized by a magnetic field. It was shown that there exists a critical magnetic field that cancels the contribution of the electrons occupying the open Fermi surface to the vertical conductivity in the case when the chemical potential exceeds the width of the miniband, thus resulting in the observed VLMR. This effect produces the conditions necessary to observe the quantized Hall effect in the three-dimensional electron system of a superlattice.
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页数:6
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