Analysis of Soft Error Rates in 65-and 28-nm FD-SOI Processes Depending on BOX Region Thickness and Body Bias by Monte-Carlo Based Simulations

被引：10

作者：

Zhang, Kuiyuan ^{[1
]}

Umehara, Shigehiro ^{[1
]}

Yamaguchi, Junki ^{[1
]}

Furuta, Jun ^{[1
]}

Kobayashi, Kazutoshi ^{[1
]}

机构：

[1] Kyoto Inst Technol, Grad Sch Sci & Technol, Kyoto 6068585, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2016年 / 63卷 / 04期

关键词：

FD-SOI; Monte-Carlo simulation; radiation effects; TCAD; IMPACT;

D O I：

10.1109/TNS.2016.2589268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper analyzes how body bias and BOX region thickness affect soft error rates in 65-nm SOTB (Silicon on Thin BOX) and 28-nm UTBB (Ultra Thin Body and BOX) FD-SOI processes. Soft errors are induced by alpha-particle and neutron irradiation and the results are then analyzed by Monte Carlo based simulation using PHITS-TCAD. The alpha-particle-induced single event upset (SEU) cross-section and neutron-induced soft error rate (SER) obtained by simulation are consistent with measurement results. We clarify that SERs decreased in response to an increase in the BOX thickness for SOTB while SERs in UTBB are independent of BOX thickness. We also discover SOTB develops a higher tolerance to soft errors when reverse body bias is applied while UTBB become more susceptible

引用

页码：2002 / 2009

页数：8

共 5 条

[1] Anasysis of BOX Layer Thickness on SERs of 65 and 28nm FD-SOI Processes by a Monte-Carlo Based Simulation Tool
Zhang, Kuiyuan
Kanda, Shohei
Yamaguchi, Junki
Furuta, Jun
Kobayashi, Kazutoshi
[J]. 2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2015,
[2] Analysis of the Soft Error Rates on 65-nm SOTB and 28-nm UTBB FD-SOI Structures by a PHITS-TCAD Based Simulation Tool
Zhang, Kuiyuan
Kanda, Shohei
Yamaguchi, Junki
Furuta, Jun
Kobayashi, Kazutoshi
[J]. 2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2015, : 156 - +
[3] GC-eDRAM With Body-Bias Compensated Readout and Error Detection in 28-nm FD-SOI
Giterman, Robert
Bonetti, Andrea
Burg, Andreas
Teman, Adam
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2019, 66 (12) : 2042 - 2046
[4] A 28-nm FD-SOI CMOS Variable-Gain Amplifier With Body-Bias-Based DC-Offset Cancellation for Automotive Radars
Finocchiaro, Alessandro
Papotto, Giuseppe
Ragonese, Egidio
Palmisano, Giuseppe
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2019, 66 (10) : 1693 - 1697
[5] Analysis of Neutron-induced Soft Error Rates on 28nm FD-SOI and 22nm FinFET Latches by the PHITS-TCAD Simulation System
Furuta, Jun
Umehara, Shigehiro
Kobayashi, Kazutoshi
[J]. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017), 2017, : 185 - 188

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