A mechanism for dynamic lateral polarization in CdZnTe under high flux x-ray irradiation

被引：37
|
作者：
Bale, Derek S. [1 ]
Soldner, Stephen A. [1 ]
Szeles, Csaba [1 ]
机构：
[1] Compound Semicond Grp II VI Inc, eV PRODUCTS, Saxonburg, PA 16056 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 08期
关键词：
D O I：
10.1063/1.2883924
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It has been observed that pixillated CdZnTe detectors fabricated from crystals with low hole transport properties (mu(h) tau(h) < 10(-5) cm(2) V-1) experience a dynamic lateral polarization when exposed to a high flux of x-rays. In this effect, counts are transferred from pixels near the edge of the irradiated region to pixels in the interior. In this letter, we propose a mechanism capable of explaining the observed dynamical effect. The mechanism is based on a transverse electric field that is generated due to space charge that builds within the material. This transverse field, in turn, is responsible for the altered carrier trajectories toward the center of the irradiated region. (C) 2008 American Institute of Physics.
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页数：3
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